发明名称 |
High light extraction efficiency nitride based light emitting diode by surface roughening |
摘要 |
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching. |
申请公布号 |
US8114698(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20080325946 |
申请日期 |
2008.12.01 |
申请人 |
ZHONG HONG;TYAGI ANURAG;VAMPOLA KENNETH J.;SPECK JAMES S.;DENBAARS STEVEN P.;NAKAMURA SHUJI;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
ZHONG HONG;TYAGI ANURAG;VAMPOLA KENNETH J.;SPECK JAMES S.;DENBAARS STEVEN P.;NAKAMURA SHUJI |
分类号 |
H01L21/00;H01L33/20;H01L33/22;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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