METHOD OF FORMING A GATE STRUCTURE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A gate structure formation method and a semiconductor device manufacturing method using the same are provided to prevent threshold voltage variations by deoxidizing an oxidized edge part of a gate electrode using a plasma processing process. CONSTITUTION: A gate pattern(150) is formed by successively laminating a gate dielectric film pattern(125) and a gate electrode(135). The gate electrode includes metal. An oxidized edge part of the gate electrode is deoxidized through a first plasma processing process which uses reaction gas. A spacer is arranged on a sidewall of the gate pattern. The first plasma processing process uses ammonia(NH3) gas or nitrogen gas as the reaction gas.