发明名称 VERTICAL INLINE CVD SYSTEM
摘要 The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
申请公布号 US2012031333(A1) 申请公布日期 2012.02.09
申请号 US201113098253 申请日期 2011.04.29
申请人 KURITA SHINICHI;KUDELA JOZEF;ANWAR SUHAIL;WHITE JOHN M.;YIM DONG-KIL;WOLF HANS GEORG;ZVALO DENNIS;INAGAWA MAKOTO;MORI IKUO;APPLIED MATERIALS, INC. 发明人 KURITA SHINICHI;KUDELA JOZEF;ANWAR SUHAIL;WHITE JOHN M.;YIM DONG-KIL;WOLF HANS GEORG;ZVALO DENNIS;INAGAWA MAKOTO;MORI IKUO
分类号 H01L21/677;B25J9/00;C23C16/44;C23C16/511 主分类号 H01L21/677
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