发明名称 |
GALLIUM-CONTAINING TRANSITION METAL THIN FILM FOR CIGS NUCLEATION |
摘要 |
A solar cell comprises a substrate, a first transition metal layer comprising an alkali element or an alkali compound located over the substrate, a second transition metal layer comprising gallium located over the first transition metal layer, at least one p-type semiconductor absorber layer including a copper indium selenide (CIS) based alloy material located over the second transition metal layer, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a top electrode located over the n-type semiconductor layer. |
申请公布号 |
WO2012018822(A2) |
申请公布日期 |
2012.02.09 |
申请号 |
WO2011US46277 |
申请日期 |
2011.08.02 |
申请人 |
MIASOLE;SEVANNA, SWATI;DEMIRKAN, KORHAN;ZUBECK, ROBERT |
发明人 |
SEVANNA, SWATI;DEMIRKAN, KORHAN;ZUBECK, ROBERT |
分类号 |
H01L31/042;H01L31/18 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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