| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the semiconductor device which can relax stress of an SiO<SB POS="POST">2</SB>film, in particular, a coating type SiO<SB POS="POST">2</SB>film. <P>SOLUTION: A ReRAM according to the present embodiment includes: a memory part formed of a three-dimensional structure in which a plurality of memory structures are laminated; and a wiring region, for example, formed in a structure in which the coating type SiO<SB POS="POST">2</SB>film, which fills in a wide space around an element, is segmented into small ones by a SiN film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
