发明名称 PLASMA TREATMENT APPARATUS AND SURFACE TREATMENT METHOD FOR BASE MATERIAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a surface treatment method for a base material capable of reducing production cost. <P>SOLUTION: The plasma treatment apparatus is equipped with a chamber 1, a base material holder 3 arranged in the chamber 1 and supporting a base material 2, a gas introduction path connected to the chamber 1 and introducing treating gas for etching into the chamber 1, and a high-frequency power source 4 for supplying high-frequency output of 50 to 500 kHz into the chamber 1, and produces plasma of the treating gas for etching in the chamber 1 by the high-frequency output supplied from the high-frequency power source 4 to remove a surface layer of the base material 2. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012026038(A) 申请公布日期 2012.02.09
申请号 JP20110159917 申请日期 2011.07.21
申请人 YAMAGUCHI PREFECTURAL INDUSTRIAL TECHNOLOGY INSTITUTE;UTEC:KK 发明人 IDE YUKIO;HONDA YUJI
分类号 C23G5/00;C23C8/02;C23C8/38;C23C10/02;C23C10/08;C23C16/503;C23C28/04;H05H1/46 主分类号 C23G5/00
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