| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Schottky barrier diode in which concentration of an external stress on the vicinity of the top face of the sidewall of a trench can be relaxed by dispersing the stress in a barrier metal layer even when the external stress generated from an electrode metal layer acts on the joint interface of the barrier metal layer and a conductor, and to provide a method of manufacturing the same. <P>SOLUTION: In a Schottky barrier diode (SBD), a trench 3 is formed on the surface 2a of a silicon substrate 2, an insulating film 4 is formed on the inner surface of the trench 3, a conductor 5 is buried in the trench 3, a barrier metal layer 12 and an electrode metal layer 7 are laminated to cover the silicon substrate 2, the insulating film 4 and the conductor 5, and a metal 14 having a thermal expansion coefficient higher than that of the barrier metal layer 12 is buried in an opening 13 formed in a region above the conductor 5 of the barrier metal layer 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
