| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing method in which the concentration of residual sulphur (S) on a substrate to be processed can be controlled to a specified value or below after an oxide film is subjected to plasma etching by using CF based gas and COS gas. <P>SOLUTION: The plasma processing method in which plasma etching of an oxide film on a substrate to be processed is performed by one or more steps using treatment gas containing CF based gas and COS gas includes a step for performing plasma etching of the oxide film on the substrate to be processed according to a prescribed processing recipe, a step for grasping the concentration (residual (S) concentration) of residual sulphur (S) on the substrate to be processed after plasma etching is performed according to the prescribed processing recipe, a step for adjusting the ratio (COS/CF) of COS gas flow rate to CF based gas flow rate in the processing recipe so that the residual (S) concentration goes below a set value, and a step for performing actual plasma etching according to a processing recipe modified by adjusting the COS/CF. <P>COPYRIGHT: (C)2012,JPO&INPIT |
