First magnetoresistive effect elements and second magnetoresistive effect elements and are formed on the same substrate. A pinned magnetic layer of each of the first magnetoresistive effect elements has a three-layer laminated ferrimagnetic structure including magnetic layers. A pinned magnetic layer of each of the second magnetoresistive effect elements has a two-layer laminated ferrimagnetic structure including magnetic layers. The magnetization direction of the third magnetic layer of each of the magnetoresistive effect elements is antiparallel to the magnetization direction of the second magnetic layer of each of the second magnetoresistive effect elements.
申请公布号
US2012032673(A1)
申请公布日期
2012.02.09
申请号
US201113274258
申请日期
2011.10.14
申请人
MAEKAWA SHUJI;ASATSUMA KOTA;KOIKE FUMIHITO;ANDO HIDETO;ALPS ELECTRIC CO., LTD.