发明名称 |
METHOD FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device can be provided by forming a gate structure on a substrate and forming a diffusion barrier layer on the gate structure and the substrate, A stress layer can be formed on the diffusion barrier layer comprising a metal nitride or a metal oxide having a concentration of nitrogen or oxygen associated therewith. The stress layer can be heated to transform the stress layer into a tensile stress layer to reduce the concentration of the nitrogen or the oxygen in the stress layer. The tensile stress layer and the diffusion barrier layer can be removed.
|
申请公布号 |
US2012034749(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113197658 |
申请日期 |
2011.08.03 |
申请人 |
LIM KWAN-YONG;KOH CHUNG-GEUN;LEE HYUN-JUNG;KWON TAE-OUK;KIM SEOK-HOON;CHA TAE-HO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM KWAN-YONG;KOH CHUNG-GEUN;LEE HYUN-JUNG;KWON TAE-OUK;KIM SEOK-HOON;CHA TAE-HO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|