Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.
申请公布号
WO2012018374(A2)
申请公布日期
2012.02.09
申请号
WO2011US01324
申请日期
2011.07.27
申请人
AXCELIS TECHNOLOGIES INC.;LUO, SHIJIAN;ESCORCIA, ORLANDO;WALDFRIED, CARLO