| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by solving a problem that sufficient barrier property sometimes can not be ensured when a porous Low-k material is used for an interlayer insulating film and a TiN film and an Ru film are used for a barrier metal film. <P>SOLUTION: A method for manufacturing a semiconductor comprises the steps of: forming an insulating film on a substrate; forming a depressed area in the insulating film; forming a barrier film containing Al and one metal element selected from a group consisting of W, Ta, Ti and Co on an inner wall face of the depressed area and on a top face of the insulating film; forming a base film containing Ru, Pd, Ti, Ta, Pt or Ir on the barrier film; forming a conductive film containing Cu on the base film to embed the depressed area with the conductive film; and oxidizing Al contained in the barrier film after forming the barrier film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
