发明名称 |
III-NITRIDE LIGHT-EMITTING DIODE AND METHOD OF PRODUCING THE SAME |
摘要 |
<p>PURPOSE: A group III nitride light emitting diode for improving efficiency in a greenish yellow light wavelength band and a forming method thereof are provided to improve the luminous efficiency of a light emitting diode by eliminating a piezoelectric polarization effect. CONSTITUTION: A n-GaN(Gallium Nitride) nano post array(3) is ohmic-contacted to a first electrode. An indium GaN nano disc(4) is arranged on a n-GaN nano post. A p-type GaN nano post array(5) includes a p-type gallium nitride nano post. The p-type GaN nano post is corresponded to the n-GaN nano post. A second electrode is ohmic-connected to the p-type GaN nano post array.</p> |
申请公布号 |
KR20120012381(A) |
申请公布日期 |
2012.02.09 |
申请号 |
KR20110058423 |
申请日期 |
2011.06.16 |
申请人 |
NATIONAL TSING HUA UNIVERSITY |
发明人 |
GWO SHANG JR;LIN HON WAY;LU YU JUNG |
分类号 |
H01L33/30 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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