Phase Change Random Access Memory And Fabricating The Same

摘要

PURPOSE: A phase change memory apparatus and a manufacturing method thereof are provided to increase area touched to a lower electrode by etching a part of an ohmic contact layer in order to form into a recess structure. CONSTITUTION: A second interlayer insulating film(125) which exposes a part of an ohmic contact pattern is arranged. An ohmic contact layer which has a recess structure is formed by eliminating the part of the ohmic contact pattern. A heating electrode(130) is arranged along the recess structure and a sidewall of the second interlayer insulating film. A third interlayer insulating film(140) is buried between the heating electrodes. A phase change structure line is formed in order to be extended in a vertical direction with respect to an active region(110).