| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heat dissipation structure in a silicon substrate of an MMIC on which an active element including a nitride semiconductor is mounted and thereby enable a nitride semiconductor element having a large heat release to be mounted even on an Si substrate with smaller thermal conductivity than an SiC substrate. <P>SOLUTION: A semiconductor device 10 has a silicon substrate 12, a metal layer 24, and an active element 14. The silicon substrate has a mounting surface 12b and a principal surface 12a. The principal surface and the mounting surface face each other. A via hole V extending to the mounting surface from the principal surface is formed on the silicon substrate 12. The metal layer is provided within the via hole. The active element includes a nitride semiconductor. The active element has a first portion in contact with the metal layer, and a second portion located on both sides of the first portion and provided on the mounting surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
