发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer. |
申请公布号 |
US2012032215(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113034329 |
申请日期 |
2011.02.24 |
申请人 |
SAITO SHINJI;HWANG JONGIL;NUNOUE SHINYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAITO SHINJI;HWANG JONGIL;NUNOUE SHINYA |
分类号 |
H01L33/60;H01L33/32 |
主分类号 |
H01L33/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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