| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing liquid for polishing copper, which can maintain a high speed in a polishing process while sufficiently suppressing an etching speed, when being used in a case of needing the polishing of a thick metal film such as a high performance wiring board and TSV (Through Silicon Vias). <P>SOLUTION: A polishing liquid for polishing copper comprises: at least one organic acid component selected from an organic acid having two carboxyl groups and a pKa of 2.7 or less and an acid anhydride thereof and an organic acid having three or more carboxyl groups; an inorganic acid of bivalent or more; an amino acid; a protective film forming agent; an anionic surfactant; an abrasive grain; an oxidation agent; and water. A content of the organic acid component is 0.02 mol/kg or more, a content of the inorganic acid is 0.08 mol/kg or more, a content of the amino acid is 0.20 mol/kg or more, a content of the protective film forming agent is 0.02 mol/kg or more and a ratio of the content of the inorganic acid with respect to the content of the protective film forming agent is 2.00 or more. <P>COPYRIGHT: (C)2012,JPO&INPIT |
