发明名称 SEMICONDUCTOR IMAGING ELEMENT AND PRODUCTION METHOD THEREFOR, RADIATION IMAGING DEVICE AND PRODUCTION METHOD THEREFOR, AND TEST METHOD FOR SEMICONDUCTOR IMAGING ELEMENT
摘要 A solid-state imaging device according to one embodiment includes a plurality of signal output units. Each of the plurality of signal output units includes a first input terminal electrode group that includes a plurality of terminal electrodes for inputting a reset signal, a hold signal, a horizontal start signal, and a horizontal clock signal and a first output terminal electrode that provides output signals. The solid-state imaging device further includes a second input terminal electrode group that includes a plurality of terminal electrodes for receiving the reset signal, the hold signal, the horizontal start signal, and the horizontal clock signal, a plurality of switches that switch an electrode group which is connected with integrating circuits, holding circuits, and a horizontal shift register between the first input terminal electrode group and the second input terminal electrode group, and a second output terminal electrode.
申请公布号 EP2416561(A1) 申请公布日期 2012.02.08
申请号 EP20100758583 申请日期 2010.03.26
申请人 HAMAMATSU PHOTONICS K.K. 发明人 FUJITA KAZUKI;KYUSHIMA RYUJI;MORI HARUMICHI
分类号 H04N5/335;A61B6/03;G01T1/20;G01T1/24;H01L27/14;H01L27/144;H01L27/146;H04N5/32;H04N5/341;H04N5/369;H04N5/374 主分类号 H04N5/335
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