PRODUCTION OF A MICROELECTRONIC DEVICE COMPRISING A MONOCRYSTALLINE SILICON NEMS COMPONENT AND A TRANSISTOR, THE GATE OF WHICH IS PRODUCED IN THE SAME LAYER AS THE MOVABLE STRUCTURE OF SAID COMPONENT
摘要
申请公布号
EP2414276(A1)
申请公布日期
2012.02.08
申请号
EP20100712401
申请日期
2010.03.26
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES
