PHOTON-DRIVE FINGERPRINT IDENTIFICATION MODULE

摘要

A photon-drive fingerprint identification module configured to detect a fingerprint of a finger is provided, and the photon-drive fingerprint identification module includes at least a light emitting unit and a light detecting semiconductor array. The light emitting unit is configured to emit a detecting light to the finger, and the finger and the fingerprint reflect the detecting light and turn it into a signal light. The light detecting semiconductor array includes a plurality of light detecting semiconductor units arranged in an array, and the light detecting semiconductor units are configured to receive the signal light reflected by the finger and generate a plurality of electrical signals. Each of the light detecting semiconductor units sequentially includes an antireflection structure, a first type doped semiconductor layer and a second type doped semiconductor layer. The first type doped semiconductor layer is stacked between the antireflection structure and the second type doped semiconductor layer.

主权项

1. A photon-drive fingerprint identification module, configured to detect a fingerprint of a finger, the photon-drive fingerprint identification module comprising:
at least a light emitting unit, configured to emit a detecting light to the finger, wherein the finger and the fingerprint reflect the detecting light and turn the detecting light into a signal light; and a light detecting semiconductor array, comprising a plurality of light detecting semiconductor units arranged in an array, wherein the light detecting semiconductor units are configured to receive the signal light reflected by the finger and generate a plurality of electric signals, each of the light detecting semiconductor units sequentially comprises an antireflection structure, a first type doped semiconductor layer and a second type doped semiconductor layer from a side close to the finger, wherein the first type doped semiconductor layer is stacked between the antireflection structure and the second type doped semiconductor layer.