发明名称 |
Non-volatile memory device having asymmetric source/drain junction and method for fabricating the same |
摘要 |
Disclosed herein are non-volatile memory devices with asymmetric source/drain junctions and a method for fabricating the same. According to the method, a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks. |
申请公布号 |
US8110866(B2) |
申请公布日期 |
2012.02.07 |
申请号 |
US20080132386 |
申请日期 |
2008.06.03 |
申请人 |
HONG YOUNG OK;LEE MYUNG SHIK;HYNIX SEMICONDUCTOR INC. |
发明人 |
HONG YOUNG OK;LEE MYUNG SHIK |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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