NONVOLATILE SEMICONDUCTOR MEMORY TRANSISTOR AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY

摘要

PURPOSE: A non-volatile semiconductor memory transistor and a manufacturing method thereof are provided to form a capacity between a control gate and a floating gate to be larger. CONSTITUTION: An island shaped semiconductor(301) includes a source region(303), a channel region(304), and a drain region(302). A floating gate(306) is formed to surround a circumference of the channel region. A control gate(308a) is formed to surround the circumference of the floating gate. A control gate line(308) is electrically connected to the control gate. A first insulating layer is arranged on the substrate to be placed in a lower part of the floating gate.