| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including an oxide semiconductor, that has stable electrical characteristics and higher reliability. <P>SOLUTION: In a transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed on the oxide semiconductor film through heat treatment and an insulation film including oxygen, preferably a gate insulation film including a region containing oxygen more than the stoichiometric composition ratio is used as a gate insulation film in contact with the oxide semiconductor film, whereby oxygen is supplied from the gate insulation film to the oxide semiconductor film. Moreover, the use of a metal oxide film as a part of the gate insulation film suppresses a re-entry of impurities such as hydrogen or water into the oxide semiconductor film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
