| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing an SiC semiconductor thin film, with an SiC epitaxial film in which the variation of the in-plane distribution in impurity concentration is sufficiently suppressed can be produced, using MSE (Metastable Solvent Epitaxy), and a device for producing the same. <P>SOLUTION: In the method for producing the SiC semiconductor thin film, the SiC semiconductor thin film is produced by metastable solvent epitaxy. In the method, a plurality of bottom face spacers are arranged on a substrate installation tool at prescribed intervals, a carbon atom supply substrate, a plurality of upper spacers, an Si plate and a single crystal SiC seed substrate are stacked on the bottom face spacers in order, and thereafter, temperature is raised to the prescribed one higher than the melting point of Si, and a single crystal SiC film is epitaxially grown on the single crystal SiC seed substrate to produce the SiC semiconductor thin film. There is also provided the device for producing the SiC semiconductor thin film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
