| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device capable of performing a stable operation, and a method of manufacturing the same. <P>SOLUTION: The non-volatile semiconductor memory device comprises a plurality of memory strings, a selective transistor, and a carrier selection element. The memory string includes memory transistors connected in series. One end of the selective transistor is connected to one end of the memory string. One end of the carrier selection element is connected to the other end of the selective transistor. The carrier selection element determines a majority carrier that flows through a body of the memory transistor. The carrier selection element includes a third semiconductor layer, a metal layer, a second gate insulating layer, and a third conductive layer. The third semiconductor layer extends in a vertical direction with respect to a substrate. The metal layer extends from an upper surface of the third semiconductor layer. The third conductive layer surrounds the third semiconductor layer and the metal layer via the second gate insulating layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
