发明名称 SPUTTERING TARGET FOR MAGNETIC RECORDING FILM AND PROCESS FOR PRODUCING SAME
摘要 Disclosed is a sputtering target for magnetic recording films which contains SiO2, characterized by having a ratio of the intensity of the peak assigned to cristobalite, which is crystallized SiO2, to the background intensity in X-ray diffraction (cristobalite peak intensity/background intensity) of 1.40 or less. The sputtering target for magnetic recording films is inhibited from containing cristobalite, which is causative of particle generation during sputtering. With the target, a reduction in burn-in time is possible.
申请公布号 WO2012014504(A1) 申请公布日期 2012.02.02
申请号 WO2011JP52125 申请日期 2011.02.02
申请人 JX NIPPON MINING & METALS CORPORATION;TAKAMI HIDEO;NARA ATSUSHI;OGINO SHIN-ICHI 发明人 TAKAMI HIDEO;NARA ATSUSHI;OGINO SHIN-ICHI
分类号 C23C14/34 主分类号 C23C14/34
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