| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage device capable of being highly integrated and a method for manufacturing the nonvolatile storage device. <P>SOLUTION: A nonvolatile storage device according to embodiments includes a lower electrode layer; a nanomaterial aggregate layer provided on the lower electrode layer and including a plurality of fine conductors collected via a gap; and an upper electrode layer provided on the nanomaterial aggregate layer. Some of the fine conductors are embedded in at least a lower part of the upper electrode layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
