SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device in which contact regions connected to source regions and base regions, can be sufficiently made into contact with a source electrode even when formed finely.

SOLUTION: In a silicon carbide semiconductor device, a longitudinal direction of contact holes 12a, that is, a longitudinal direction of contact regions of a source electrode 11 with n+type source regions 4 and p+type body layers 5 is made orthogonal to a longitudinal direction of the n+type source regions 4 and the p+type body layers 5. This allows a contact width of each of the n+type source regions 4 and the p+type body layers 5 to the source electrode 11 to be the same width as the contact holes 12a. This allows the p+type body layers 5 connected to the n+type source regions 4 and p+type base regions 3 to be sufficiently made into contact with the source electrode 11, even when the device is formed finely.

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