发明名称 Group III-Nitride Layers With Patterned Surfaces
摘要 A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
申请公布号 US2012028448(A1) 申请公布日期 2012.02.02
申请号 US201113248394 申请日期 2011.09.29
申请人 CHOWDHURY AREF;NG HOCK;SLUSHER RICHART ELLIOT 发明人 CHOWDHURY AREF;NG HOCK;SLUSHER RICHART ELLIOT
分类号 H01L21/20;H01L21/205;B81B1/00;G02B6/122;H01J1/30;H01J1/304;H01J9/02;H01L21/306 主分类号 H01L21/20
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