发明名称 |
Group III-Nitride Layers With Patterned Surfaces |
摘要 |
A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer. |
申请公布号 |
US2012028448(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113248394 |
申请日期 |
2011.09.29 |
申请人 |
CHOWDHURY AREF;NG HOCK;SLUSHER RICHART ELLIOT |
发明人 |
CHOWDHURY AREF;NG HOCK;SLUSHER RICHART ELLIOT |
分类号 |
H01L21/20;H01L21/205;B81B1/00;G02B6/122;H01J1/30;H01J1/304;H01J9/02;H01L21/306 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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