COMPOSITE SUBSTRATE, ELECTRONIC COMPONENT, METHOD FOR PRODUCING COMPOSITE SUBSTRATE, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT

摘要

[Problem] Provided are: a composite substrate which comprises a silicon substrate having excellent crystallinity; a method for producing a composite substrate; and a method for manufacturing a semiconductor element. [Solution] A composite substrate (1) is obtained by bonding a semiconductor substrate (20) on an electrically insulating supporting substrate (10). The semiconductor substrate (20) is formed of silicon. The semiconductor substrate (20) comprises a plurality of first regions (20x), in each of which an element portion functioning as a semiconductor element is formed, and a second region (20y) which is located between the first regions (20x). The semiconductor substrate (20) is provided with an oxidized portion (22) in a lower main surface (20b) of the second region (20y), said oxidized portion (22) being formed of silicon oxide.