| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a sapphire seed for growing a crystal having reduced dislocation density. <P>SOLUTION: The method of manufacturing the sapphire seed formed by a sapphire single crystal and used for growing another sapphire single crystal on a (0001) face as a crystal growing surface includes steps of: preparing a sapphire seed whose side face forms a crystal face within a ä1-100} face±10° or less, and whose shape is processed so as to include a hexagonal prism or a triangle prism; and applying a predetermined thermal treatment to the sapphire seed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
