| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device that has high power generation capacity at low light intensity by dividing a semiconductor layer appropriately and preventing short-circuiting occurring at a cell side plane part. <P>SOLUTION: A photoelectric conversion device comprises a separation groove formed between one first electrode and the adjacent other first electrode, a laminated body including a first semiconductor layer having one conductivity type formed on the first electrode, a second semiconductor layer including an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, and a connection electrode that connects the one first electrode to the second electrode being in contact with the third semiconductor layer of the laminated body formed on the adjacent other first electrode. A side plane part of the second semiconductor layer is not crystallized. <P>COPYRIGHT: (C)2012,JPO&INPIT |
