| 摘要 |
Disclosed is a laser processing method in which laser light (L) is focused inside a target object (1) formed from silicon, thereby forming a modified region (7), and etching is performed along the modified region (7), thereby forming a through-hole (24) in the target object (1). Said method includes: a laser-light focusing step in which laser light (L) is focused on the target object (1), thereby forming a modified region (7) along the part of the target object (1) that corresponds to the aforementioned through-hole (24); an etch-resistant-film generation step, after the laser-light focusing step, in which an etch-resistant film (22) which is resistant to etching is generated on an outer surface of the target object (1); and an etching treatment step, after the etch-resistant-film generation step, in which the target object (1) is etched, said etching being made to selectively progress along the modified region (7) to form the through-hole (24). In the laser-light focusing step, the modified region (7) is exposed to the outside surface of the target object (1). |
