发明名称 PHOTOVOLTAIC CELLS HAVING METAL WRAP THROUGH AND IMPROVED PASSIVATION
摘要 A photovoltaic device in a semiconductor substrate, has a radiation receiving front surface and a rear surface, a first region of one conductivity type (29), and a second region with the opposite conductivity type(20) adjacent to the front surface, and an antireflection layer (27). The rear surface is covered by a dielectric layer (39) covering also an inside surface of the via. The front surface has current collecting conductive contacts (23) and the rear surface has conductive contacts (31) extending through the said dielectric. A conductive path is provided in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed, and the same dielectric serves to insulate, provide thermal protection for the semiconductor, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.
申请公布号 EP2215663(B1) 申请公布日期 2011.05.25
申请号 EP20080856838 申请日期 2008.12.02
申请人 IMEC;PHOTOVOLTECH 发明人 DROSS, FREDERIC;ALLEBE, CHRISTOPHE;SZLUFCIK, JOZEF;BEAUCARNE, GUY
分类号 H01L31/0224 主分类号 H01L31/0224
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