发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member; a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member. |
申请公布号 |
US2012028460(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113270668 |
申请日期 |
2011.10.11 |
申请人 |
WADA MAKOTO;HIGASHI KAZUYUKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
WADA MAKOTO;HIGASHI KAZUYUKI |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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