| 摘要 |
Disclosed is a method for manufacturing a semiconductor device (10) that has a cooling mechanism (61). Said method includes: a modified-region formation step in which laser light (L) is focused on a flat workpiece (1) formed from silicon, thereby forming a modified region (7) inside the workpiece (1) so as to extend along a modified-region formation plan line (5); an etching treatment step, after the modified-region formation step, in which the target object is anisotropically etched, said etching made to selectively progress along the modified region (7) forming, as a cooling mechanism (61), a fluid channel inside the workpiece (1) for circulating a cooling medium (61); and a functional-element formation step in which a functional element (15) is formed on one principal-surface side of the workpiece (1). |
