发明名称 |
MANGANESE OXIDE FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE |
摘要 |
There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C.
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申请公布号 |
US2012025380(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113267227 |
申请日期 |
2011.10.06 |
申请人 |
NEISHI KOJI;KOIKE JUNICHI;MATSUMOTO KENJI;TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED |
发明人 |
NEISHI KOJI;KOIKE JUNICHI;MATSUMOTO KENJI |
分类号 |
H01L23/532;B05D5/12;H01L21/283 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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