SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

Provided are a semiconductor element and a method for producing a semiconductor element, wherein no cracks of a compound semiconductor layer occur due to the internal stress of the compound semiconductor layer during lift-off. Specifically provided is a method for producing a semiconductor element that has a configuration wherein a semiconductor layer is bonded to a supporting substrate (30). The method for producing a semiconductor element comprises: an element region formation step wherein an element region (15a) that is composed of the semiconductor layer is formed on a growth substrate (11) with a lift-off layer (12) interposed therebetween; a columnar member formation step wherein a columnar member (21) is formed on the growth substrate; a bonding step wherein the upper parts of the semiconductor layer and the columnar member are bonded to the supporting substrate; a lift off step wherein the lower surface of the semiconductor layer and the growth substrate are separated from each other by removing the lift-off layer without separating the columnar member from the growth layer; and a step wherein the columnar member is separated from the supporting substrate.