发明名称 |
Transistor with Embedded Strain-Inducing Material and Dummy Gate Electrodes Positioned Adjacent to the Active Region |
摘要 |
The uniformity of transistor characteristics may be enhanced for transistors having incorporated therein a strain-inducing semiconductor material by using appropriately positioned dummy gate electrode structures. To this end, the dummy gate electrode structures may be positioned such that these structures may connect to or may overlap with the edge of the active region, thereby preserving a portion of the initial semiconductor material of the active region at the edge thereof upon forming the corresponding cavities. |
申请公布号 |
US2012025315(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113154941 |
申请日期 |
2011.06.07 |
申请人 |
KRONHOLZ STEPHAN;BEERNINK GUNDA;WIATR MACIEJ;GLOBALFOUNDRIES INC. |
发明人 |
KRONHOLZ STEPHAN;BEERNINK GUNDA;WIATR MACIEJ |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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