发明名称 |
Inverted-trench grounded-source FET structure with trenched source body short electrode |
摘要 |
This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance. |
申请公布号 |
US2012025301(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113199382 |
申请日期 |
2011.08.25 |
申请人 |
LUI SIK K.;HEBERT FRANCOIS;BHALLA ANUP |
发明人 |
LUI SIK K.;HEBERT FRANCOIS;BHALLA ANUP |
分类号 |
H01L29/78;H01L21/8234 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|