发明名称 |
CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE HAVING ASYMMETRIC FIELD-EFFECT TRANSISTOR WITH TAILORED POCKET PORTION ALONG SOURCE/DRAIN ZONE |
摘要 |
<p>An asymmetric insulated-gate field effect transistor (100U or 102U) is provided along an upper surface of a semiconductor body so as to have first and second source/drain zones (240 and 242 or 280 and 282) laterally separated by a channel zone (244 or 284) of the transistor's body material. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A pocket portion (250 or 290) of the body material more heavily doped than laterally adjacent material of the body material extends along largely only the first of the S/D zones and into the channel zone. The vertical dopant profile of the pocket portion is tailored to reach a plurality of local maxima at respective locations (PH-1-PH-3-NH-3) spaced apart from one another. This typically enables the transistor to have reduced current leakage.</p> |
申请公布号 |
EP2412025(A1) |
申请公布日期 |
2012.02.01 |
申请号 |
EP20100756483 |
申请日期 |
2010.03.25 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
YANG, JENG-JUIN;BULUCEA, CONSTANTIN;BAHL, SANDEEP, R. |
分类号 |
H01L29/78;H01L21/336;H01L29/10 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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