发明名称 |
APPARATUS FOR CHEMICAL VAPOR DEPOSITION |
摘要 |
PURPOSE: A chemical vapor deposition apparatus is provided to improve the deposition quality of a wafer by suppressing the contamination of a chamber unit. CONSTITUTION: A susceptor unit(20) supports the wafer in a chamber unit(10). A gas supply unit(30) supplies reactive gas to the wafer and supplies inactive gas to the chamber unit facing the wafer supported by the susceptor unit. The gas supply unit is extended from the lower side to the upper side of the wafer and is formed in a rotation axis of the susceptor unit.
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申请公布号 |
KR20120008795(A) |
申请公布日期 |
2012.02.01 |
申请号 |
KR20100069921 |
申请日期 |
2010.07.20 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
KIM, JUN WOO;LEE, WON SHIN;KIM, CHOO HO;HUR, IN HOE |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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