发明名称 ESD NETWORK CIRCUIT WITH A THROUGH WAFER VIA STRUCTURE AND A METHOD OF MANUFACTURE
摘要 The present invention generally relates to a circuit structure and a method of manufacturing a circuit, and more specifically to an electrostatic discharge (ESD) circuit with a through wafer via structure and a method of manufacture. An ESD structure includes an ESD active device and at least one through wafer via structure providing a low series resistance path for the ESD active device to a substrate. An apparatus includes an input, at least one power rail and an ESD circuit electrically connected between the input and the at least one power rail, wherein the ESD circuit comprises at least one through wafer via structure providing a low series resistance path to a substrate. A method, includes forming an ESD active device on a substrate, forming a ground plane on a backside of the substrate and forming at least one through wafer via electrically connected to a negative power supply of the ESD active device and the ground plane to provide a low series resistance path to the substrate.
申请公布号 EP2412023(A1) 申请公布日期 2012.02.01
申请号 EP20100712032 申请日期 2010.03.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 VOLDMAN, STEVEN, HOWARD
分类号 H01L27/02;H01L23/48 主分类号 H01L27/02
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