| 摘要 |
A thin film transistor array panel is provided, which includes a substrate; a plurality of semiconductor islands formed on the substrate, the plurality of semiconductor islands including a plurality of first and second extrinsic regions, and a plurality of intrinsic regions; a gate insulating layer covering the semiconductor islands; a plurality of gate lines including a plurality of gate electrodes overlapping the intrinsic regions and formed on the gate insulating layer; a plurality of data lines connected to the first extrinsic regions and formed on the gate insulating layer; and a plurality of pixel electrodes connected to the second extrinsic regions, wherein a plurality of protrusions are formed on the surfaces of the semiconductor islands, and a length of a semiconductor island is a multiple of the a distance between at least two protrusions. |
