| 摘要 |
A method of manufacturing a semiconductor device by performing divisional exposure on a predetermined area on a wafer, through two or more reticles, on each of which a mask pattern region is formed. The method includes arranging the reticles such that an outer most periphery of a field circle of exposure light incident on the wafer aligns with at least one side of the mask pattern region formed in the reticle, and exposing, to exposure light, the wafer, through the reticles so arranged. |
