发明名称 Delay time adjusting method of semiconductor integrated circuit
摘要 The delay time variation of transistors caused by the manufacturing variation is desired to be adjusted. A relation table storing a relation between sizes and voltage values (supply voltages and bias voltages) is provided. Macros each of which includes a transistor and a setting voltage generation circuit for applying a setting voltage to the transistor are formed on a chip. A process data indicating a size of the transistor is generated. The voltage value corresponding to the size of the transistor indicated by the process data in the relation table is selected as an optimum voltage value (supply voltage Vdd, bias voltage Bias) for each of the macros. The setting voltage of each of the macros is set to the optimum voltage value. The delay time can be adjusted without requiring a detection circuit for detecting the delay time.
申请公布号 US8108807(B2) 申请公布日期 2012.01.31
申请号 US20080219840 申请日期 2008.07.29
申请人 YAMAGUCHI TOSHIHIDE;RENESAS ELECTRONICS CORPORATION 发明人 YAMAGUCHI TOSHIHIDE
分类号 G06F17/50 主分类号 G06F17/50
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