| 摘要 |
<p>The present disclosure provides a dual port static random access memory (SRAM) cell.The dual-port SRAM cell includes a first and second inverters cross-coupled for data storage,each inverter includes a pull-up device (PU) and a plurality of pull-down devices (PDs); aplurality of pass gate devices configured with the two cross-coupled inverters; and at least twoports coupled with the plurality of pass gate devices (PGs) for reading and writing, wherein eachof PU, PDs and PGs includes a fin field-effect transistor (FinFET), a ratio between a number ofPDs in the SRAM cell and a number of PGs in the SRAM cell is greater than 1, and a number ofFinFETs in the SRAM cell is equal to or greater than 12.Figure 1</p> |
