摘要 |
Abstract COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OFSILICON NITRIDECompositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100°C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 A min -1Figure 1 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
COOPER, EMANUEL I.;SPARKS, EILEEN;BOWERS, WILLIAM R.;BISCOTTO, MARK A.;YANDERS, KEVIN P.;KORZENSKI, MICHAEL B.;SONTHALIA, PRERNA;THOMAS, NICOLE E. |