| 摘要 |
<P>PROBLEM TO BE SOLVED: To separately fabricate a thin film transistor without difficulty. <P>SOLUTION: When a driving transistor 6 that is a first thin film transistor having a bottom gate structure and a switching transistor 5 that is a second thin film transistor having a top gate structure are fabricated, a first gate electrode 6a of the driving transistor 6 which is formed between a substrate 10 and a first insulating film 11 and a second gate electrode 5a of the switching transistor 5 which is formed over a second insulating film 5d are formed in a separate process, while structures of other thin film transistors are formed in a common process. Thus, by adopting a manufacturing method in which components other than the first gate electrode 6a of the driving transistor 6 and the second gate electrode 5a of the switching transistor 5 are formed in a common manufacturing process, the driving transistor 6 can be fabricated separately from the switching transistor 5. <P>COPYRIGHT: (C)2012,JPO&INPIT |
