METHODS OF FORMING A METAL CONTACT ON A SILICON SUBSTRATE

摘要

The abstract was not in accordance with PCT Rule 8.1(b) because it was more than 150 words in length. The abstract has been established by this Authority to read as follows: Forming a metal contact on a silicon substrate includes depositing a nanoparticle ink on a substrate surface in a pattern, the nanoparticle ink comprising a set of nanoparticles and a set of solvents. The method also includes heating the substrate to a first temperature for a first time period to create a densified nanoparticle layer with a nanoparticle layer thickness of greater than about 50 nm. The method further includes depositing an SiNx layer on the substrate surface, the SiNx layer having a SiNx layer thickness of between about 50 nm and about 110 nm; exposing the substrate to an etchant that is selective to the densified nanoparticle layer for a second time period and at a second temperature to create a via; and forming a metal contact in the via, wherein an ohmic contact is formed with the silicon substrate.